By A. Borghesi,U. M. Gösele,J. Vanhellemont,A. M. Gué,M. Djafari-Rouhani

ISBN-10: 0444824138

ISBN-13: 9780444824134

Containing over two hundred papers, this quantity includes the complaints of 2 symposia within the E-MRS sequence. half I provides a cutting-edge evaluation of the subject - Carbon, Hydrogen, Nitrogen and Oxygen in Silicon and in different Elemental Semiconductors. there has been robust illustration from the economic laboratories, illustrating that the subject is very suitable for the semiconductor industry.

The moment a part of the quantity offers with an issue that's present process a technique of convergence with issues which are extra really program orientated. to start with, the complicated instrumentation which, by utilizing atomic strength and tunnel microscopies, excessive solution electron microscopy and different excessive precision research tools, now allows direct entry to atomic mechanisms. Secondly, the technological improvement which in all parts of functions, rather within the box of microelectronics and microsystems, calls for as a result of miniaturisation race, an actual mastery of the microscopic mechanisms.

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C, H, N and O in Si and Characterization and Simulation of Materials and Processes: Proceedings of Symposium N and Symposium G of the 1995 E-Mrs Spring ... Research Society Symposia Proceedings) by A. Borghesi,U. M. Gösele,J. Vanhellemont,A. M. Gué,M. Djafari-Rouhani


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